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| Advanced Technical Information DSEP 40-03AS IFAV = 40 A VRRM = 300 V trr = 35 ns HiPerFREDTM Epitaxial Diode with soft recovery VRSM V 300 VRRM V 300 Type A C TO-263 A C (TAB) A DSEP 40-03AS A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Weight Conditions rect., d = 0.5; TC = 120C TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 9 A; L = 100 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 40 300 4 0.9 -40...+175 175 -40...+150 A A A mJ A C C C W g Features International standard package * Planar passivated chips * Very short recovery time l Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C typical 175 2 Symbol IR Conditions VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 150C IF = 40 A; TVJ = 150C TVJ = 25C Characteristic max. Values 1 100 1.11 1.42 0.85 A A V V K/W ns A VF RthJC trr typ. IRM typ. VR = 100 V; IF = 40 A; -diF/dt = 200 A/s; TVJ = 25C 35 3.5 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Pulse Width = 300 s, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. Dimensions see Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 1-1 0528 |
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